Title :
Self-ESD-protected transmission line broadband in CMOS28nm UTBB-FDSOI
Author :
Johan Bourgeat;Tekfouy Lim;Boris Heitz;Jean Jimenez;Philippe Galy
Author_Institution :
STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France
Abstract :
Advanced CMOS Technologies, and particularly Ultra-Thin Body and BOX Fully Depleted Silicon on Insulator (UTBB-FDSOI) technology provide good performances for analog high frequency and ultra-low power applications. We present in this paper self-ESD-protected transmission lines based on two different ESD strategies. Specific ESD protections based on bidirectional SCR (bi-SCR) are directly embedded on the transmission lines.
Keywords :
"Electrostatic discharges","Capacitance","BiCMOS integrated circuits","Trigger circuits","Radio frequency","Transmission line measurements","Junctions"
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
DOI :
10.1109/EOSESD.2015.7314805
