• DocumentCode
    3683170
  • Title

    Innovative high-density ESD protection device in state of the art UTBB FDSOI technologies

  • Author

    Pascal Fonteneau;Yohann Solaro;David Marin-Cudraz;Charles-Alexandre Legrand;Claire Fenouillet-Beranger

  • Author_Institution
    STMicroelectronics, 850 rue Jean Monnet, F-38926 Crolles Cedex, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    For the first time, we demonstrate an innovative way to build ESD protection in FDSOI technologies. This protection is comprised of two stacked devices one on the other: a bottom bulk-thyristor and a top thin film triggering device. Low leakage current, tunable triggering voltage and high current capability are highlighted.
  • Keywords
    "Electrostatic discharges","Thyristors","Logic gates","Junctions","Leakage currents","Anodes","Current measurement"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015 37th
  • Type

    conf

  • DOI
    10.1109/EOSESD.2015.7314808
  • Filename
    7314808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3683170