DocumentCode :
36864
Title :
Modeling the Dark Current Non-Uniformity of Image Sensors With GEANT4
Author :
Inguimbert, C. ; Nuns, T. ; Ursule, M.C. ; Falguere, D. ; Herve, D. ; Beaumel, M. ; Poizat, Marc
Author_Institution :
DESP, ONERA, Toulouse, France
Volume :
61
Issue :
6
fYear :
2014
fDate :
Dec. 2014
Firstpage :
3323
Lastpage :
3330
Abstract :
The 3D Monte Carlo transport code GEANT 4 was used to simulate the Dark Current Non Uniformity of image sensors. The method includes three different physical processes: the Coulombic scattering, the nuclear elastic interaction and the nuclear inelastic interaction. The dark current distribution is directly deduced from the damage distribution according to the Universal Damage Factor of Srour (UDF). Comparisons have been performed with experimental measurements made on two CMOS Image Sensors (JADE from E2 V and HAS2 from ON SEMICONDUCTOR) irradiated with protons of various energies ranging from 30 MeV to 185 MeV. Despite the simplifying assumptions of the model, the calculations are demonstrated to be in quite good agreement with experimental data.
Keywords :
CMOS image sensors; Monte Carlo methods; dark conductivity; proton effects; 3D Monte Carlo transport code; CMOS image sensors; Coulombic scattering; GEANT4 code; Srour universal damage factor; damage distribution; dark current distribution; dark current nonuniformity; electron volt energy 30 MeV to 185 MeV; nuclear elastic interaction; nuclear inelastic interaction; physical processes; proton irradiation; Active pixel sensors; CMOS image sensors; Charge coupled devices; Dark current; Degradation; Image sensors; Monte Carlo methods; Protons; Radiation effects; CCD APS; CIS; DCNU; displacement damages; image sensors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2364332
Filename :
6953268
Link To Document :
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