Title :
Germanium gate junction-field-effect phototransistor integrated on SOI platform
Author :
V. Sorianello;G. De Angelis;A. De Iacovo;L. Colace;S. Faralli;M. Romagnoli
Author_Institution :
CNIT-Lab. of Photonic Networks, Pisa, Italy
fDate :
5/1/2015 12:00:00 AM
Abstract :
We report on the fabrication and characterization of a near infrared junction field effect phototransistor provided with a Germanium gate and fabricated in a silicon photonics foundry. The maximum device responsivity exceeds 36A/W with a dark current of 33μA at 2V.
Conference_Titel :
Fotonica AEIT Italian Conference on Photonics Technologies, 2015
Print_ISBN :
978-1-78561-068-4
DOI :
10.1049/cp.2015.0127
