Title :
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs
Author :
M. Mandurrino;G. Verzellesi;M. Goano;S. Dominici;F. Bertazzi;G. Ghione;M. Meneghini;G. Meneghesso;E. Zanoni
Author_Institution :
Dipt. di Elettron. e Telecomun., Politec. di Torino, Turin, Italy
fDate :
5/1/2015 12:00:00 AM
Abstract :
A semi-classical model describing electron and hole trap-assisted tunneling (TAT), which accounts for multiphonon and elastic transitions, is presented and tested on different single-quantum-well light-emitting diode (LED) structures. Our numerical and experimental study confirms that TAT constitutes one of the main contributions to the forward current below the LED optical turn-on.
Conference_Titel :
Fotonica AEIT Italian Conference on Photonics Technologies, 2015
Print_ISBN :
978-1-78561-068-4
DOI :
10.1049/cp.2015.0136
