Title :
Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters
Author :
Chee-Keong Tan;Nelson Tansu
Author_Institution :
Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
Abstract :
The gain and spontaneous emission characteristics of AlInN quantum well were calculated and analyzed using 6-band k.p method, and the finding revealed the potential of employing AlInN alloy as active region for deep ultraviolet emitter.
Keywords :
"Spontaneous emission","Aluminum gallium nitride","Wide band gap semiconductors","Stimulated emission","Light emitting diodes"
Conference_Titel :
Photonics Conference (IPC), 2015
DOI :
10.1109/IPCon.2015.7323494
