Title :
High-power flip-chip bonded photodiode with 110 GHz bandwidth
Author :
Q. Li;K. Li;X. Xie;Y. Fu;Z. Yang;Y. Shen;Y. Wang;A. Beling;J. C. Campbell
Author_Institution :
Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, 22904, USA
Abstract :
We report 110 GHz flip-chip-bonded modified uni-traveling-carrier (MUTC) photodiodes with RF output power as high as 9.6 dBm at 100 GHz frequency.
Keywords :
"Photodiodes","Radio frequency","Indium tin oxide","Frequency control","Microscopy","Nickel","RNA"
Conference_Titel :
Photonics Conference (IPC), 2015
DOI :
10.1109/IPCon.2015.7323550
