DocumentCode :
3688117
Title :
Improvement of power characteristics in 850 nm quantum well laser with asymmetric barriers
Author :
F.I. Zubov;M.V. Maximov;Yu.M. Shernyakov;N.Yu. Gordeev;A.M. Nadtochiy;N.V. Kryzhanovskaya;E.S. Semenova;K. Yvind;L.V. Asryan;A.E. Zhukov
Author_Institution :
St. Petersburg Academic University, 194021, Russia
fYear :
2015
Firstpage :
565
Lastpage :
566
Abstract :
Power and spectral characteristics of lasers with asymmetric barrier layers (ABLs) and a wide waveguide are studied. The use of ABLs reduces the saturation of light-current characteristic, associated with the parasitic recombination in the waveguide.
Keywords :
"Radiative recombination","Optical pumping","Optical saturation","Charge carrier processes","Gallium arsenide","Temperature"
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2015
ISSN :
1092-8081
Type :
conf
DOI :
10.1109/IPCon.2015.7323556
Filename :
7323556
Link To Document :
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