DocumentCode :
3688121
Title :
A high-speed, high-sensitivity silicon avalanche photodiode in 130-nm CMOS
Author :
Jing Gao;Hui Wu
Author_Institution :
Department of Electrical and Computer Engineering, University of Rochester, NY 14627 USA
fYear :
2015
Firstpage :
438
Lastpage :
439
Abstract :
We report a Si avalanche photodiode (APD) based on a p+/NW/p-sub structure, fabricated using a 130-nm CMOS technology. The devices achieved maximum bandwidth of 2.4 GHz and highest avalanche gain of more than 104.
Keywords :
"Substrates","Anodes","Cathodes","Silicon"
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2015
ISSN :
1092-8081
Type :
conf
DOI :
10.1109/IPCon.2015.7323561
Filename :
7323561
Link To Document :
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