Title :
A high-speed, high-sensitivity silicon avalanche photodiode in 130-nm CMOS
Author_Institution :
Department of Electrical and Computer Engineering, University of Rochester, NY 14627 USA
Abstract :
We report a Si avalanche photodiode (APD) based on a p+/NW/p-sub structure, fabricated using a 130-nm CMOS technology. The devices achieved maximum bandwidth of 2.4 GHz and highest avalanche gain of more than 104.
Keywords :
"Substrates","Anodes","Cathodes","Silicon"
Conference_Titel :
Photonics Conference (IPC), 2015
DOI :
10.1109/IPCon.2015.7323561
