DocumentCode :
3688132
Title :
High modulation efficiency of sub-milliampere threshold GaInAsP/InP membrane DFB laser
Author :
Daisuke Inoue;Takuo Hiratani;Kai Fukuda;Takahiro Tomiyasu;Tomohiro Amemiya;Nobuhiko Nishiyama;Shigehisa Arai
Author_Institution :
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 2-12-1-S9-5 O-okayama, Meguro-ku, 152-8552, Japan
fYear :
2015
Firstpage :
609
Lastpage :
610
Abstract :
Direct modulation of membrane DFB laser was carried out. Small signal response showed -3dB bandwidth of 9.5 GHz at a bias current of 1 mA. This corresponds to modulation current efficiency factor of 9.8 GHz/mA½.
Keywords :
"Modulation","Silicon","Substrates","Bandwidth","Current measurement","Optical interconnections","Cavity resonators"
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2015
ISSN :
1092-8081
Type :
conf
DOI :
10.1109/IPCon.2015.7323573
Filename :
7323573
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3688132
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