• DocumentCode
    3688143
  • Title

    Dilute-As AlNAs semiconductor for ultraviolet emitters

  • Author

    Chee-Keong Tan;Nelson Tansu

  • Author_Institution
    Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
  • fYear
    2015
  • Firstpage
    521
  • Lastpage
    522
  • Abstract
    First-principle analysis of the band structures for dilute-As AlN1-xAsx semiconductor was performed, and the findings showed the direct bandgap properties of this alloy covering the deep ultraviolet spectral regime useful for new ultraviolet emitter.
  • Keywords
    Physics
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2015
  • ISSN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/IPCon.2015.7323584
  • Filename
    7323584