DocumentCode
3688143
Title
Dilute-As AlNAs semiconductor for ultraviolet emitters
Author
Chee-Keong Tan;Nelson Tansu
Author_Institution
Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
fYear
2015
Firstpage
521
Lastpage
522
Abstract
First-principle analysis of the band structures for dilute-As AlN1-xAsx semiconductor was performed, and the findings showed the direct bandgap properties of this alloy covering the deep ultraviolet spectral regime useful for new ultraviolet emitter.
Keywords
Physics
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2015
ISSN
1092-8081
Type
conf
DOI
10.1109/IPCon.2015.7323584
Filename
7323584
Link To Document