• DocumentCode
    3688152
  • Title

    Lateral silicon photodiodes with extremely low dark current for visible and infra-red applications

  • Author

    J. Mehta;L. Lunardi

  • Author_Institution
    North Carolina State University, Raleigh 27695, USA
  • fYear
    2015
  • Firstpage
    446
  • Lastpage
    447
  • Abstract
    We present two lateral p-i-n photodiodes for operation in the 400-900nm wavelength range. The design is compatible with typical 180nm CMOS process and yields high responsivity and low dark current independent of the geometry.
  • Keywords
    "Silicon","Substrates","Junctions","Photodiodes"
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2015
  • ISSN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/IPCon.2015.7323594
  • Filename
    7323594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3688152