• DocumentCode
    3688157
  • Title

    Devices and processes for electronic-photonic integration

  • Author

    J.M. Dallesasse;B. Kesler;G.L. Su;J.A. Carlson;P.L. Lam;G. Walter

  • Author_Institution
    Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, USA
  • fYear
    2015
  • Firstpage
    482
  • Lastpage
    483
  • Abstract
    The light-emitting transistor (LET) is examined as a fundamental circuit element for electronic-photonic integration. Basic device properties, methods of integration, and simple electronic-photonic circuits built upon the LET are examined. Novel materials, methods, and devices for heterogeneous integration are also presented.
  • Keywords
    "Radiative recombination","Transistors","Epitaxial growth","Stimulated emission"
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2015
  • ISSN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/IPCon.2015.7323599
  • Filename
    7323599
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3688157