DocumentCode
3688171
Title
Continuous-wave emission of III–V quantum dot lasers grown directly on Si substrates
Author
Samuel Shutts;Stella N. Elliott;Peter M. Smowton;Angela Sobieserski;Jiang Wu;Mingchu Tang;Huiyun Liu;Richard Beanland
Author_Institution
Physics and Astronomy, Queens Building, The Parade, Cardiff, CF24 3AA, United Kingdom
fYear
2015
Firstpage
595
Lastpage
596
Abstract
We report on 1.3-μm emitting InAs/GaAs quantum-dot ridge lasers grown directly on a silicon substrate. Using an optimised dislocation filter design, continuous-wave operation is achieved with power outputs exceeding 20-mW and operation up to 39°C.
Keywords
"Gallium arsenide","Indium gallium arsenide","Silicon","Heat sinks","Threshold current"
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2015
ISSN
1092-8081
Type
conf
DOI
10.1109/IPCon.2015.7323616
Filename
7323616
Link To Document