• DocumentCode
    3688186
  • Title

    First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode

  • Author

    M. A. Majid;A. A. Al-Jabr;H. M. Oubei;M. S. Alias;T. K. Ng;D. H. Anjum;B. S. Ooi

  • Author_Institution
    Photonics Laboratory, King Abdullah University of Science &
  • fYear
    2015
  • Firstpage
    575
  • Lastpage
    576
  • Abstract
    We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is ~4.5mW which is the highest ever reported power on this material system at room-temperature.
  • Keywords
    "Lasers","Annealing","Photonic band gap","Current density","Power generation","Optical device fabrication","Power amplifiers"
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2015
  • ISSN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/IPCon.2015.7323633
  • Filename
    7323633
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3688186