Title :
Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate
Author :
Chao Shen;John Leonard;Arash Pourhashemi;Hassan Oubei;Mohd Sharizal Alias;Tien Khee Ng;Shuji Nakamura;Steven P. DenBaars;James S. Speck;Ahmed Y. Alyamani;Munir M. Eldesouki;Boon S. Ooi
Author_Institution :
Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal 21534, Saudi Arabia
Abstract :
We have demonstrated the monolithic integration of an electroabsorption modulator with a laser diode and measured DC and AC modulation characteristics of the device, which is grown on (2021̅) plane GaN substrate. By alternating the modulation voltage at -3.5 V and 0 V, we achieve the laser output power of <; 1.5 mW to > 9 mW, respectively, leading to ~8.1 dB On/Off ratio. Our results clearly show that a low power consumption modulator can be achieved with semipolar EA-modulator compared to that of the c-plane devices.
Keywords :
"Optical polarization","Optical modulation","Passive optical networks","Absorption","Gallium nitride","Substrates"
Conference_Titel :
Photonics Conference (IPC), 2015
DOI :
10.1109/IPCon.2015.7323637
