DocumentCode
3688201
Title
High performance Ge/Si avalanche photodiode
Author
Mengyuan Huang;Pengfei Cai;Liangbo Wang;Su Li;Wang Chen;Ching-yin Hong;Nai Zhang;Dong Pan
Author_Institution
SiFotonics-Technologies Co. Ltd., 500 West Cummings Park, Suite 3250, Woburn, MA 01801, USA
fYear
2015
Firstpage
440
Lastpage
441
Abstract
We review our recent development of germanium on silicon avalanche photodiodes (Ge/Si APDs). Our Ge/Si APDs, manufactured by a standard CMOS commercial foundry, satisfy the requirements of various optical communication systems from 10Gb/s to 25Gb/s.
Keywords
"Sensitivity","Silicon","Absorption","Data systems","Standards","Radio frequency","Power measurement"
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2015
ISSN
1092-8081
Type
conf
DOI
10.1109/IPCon.2015.7323649
Filename
7323649
Link To Document