DocumentCode
3688293
Title
High-power, high-speed for RF photonics applications
Author
Joe C. Campbell
Author_Institution
Electrical and Computer Engineering Department, University of Virginia, Charlottesville, 22904, United States of America
fYear
2015
Firstpage
124
Lastpage
125
Abstract
There are a growing number of RF photonics applications. In these systems photodiodes with high saturation current and high linearity enable high link-gain, low noise figure, and high dynamic range. To date, the best performance has been achieved with charge-compensated modified uni-traveling carrier (CC-MUTC) photodiodes. This talk will describe the design and performance characteristics of these photodiodes.
Keywords
"Photonics","Photodiodes","Indium phosphide","III-V semiconductor materials","Silicon","Indium gallium arsenide","Satellites"
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2015
ISSN
1092-8081
Type
conf
DOI
10.1109/IPCon.2015.7323745
Filename
7323745
Link To Document