• DocumentCode
    3688968
  • Title

    Theoretical analyses and modeling for nanoelectronics

  • Author

    G. Baccarani;E. Baravelli;E. Gnani;A. Gnudi;S. Reggiani

  • Author_Institution
    ARCES-DEI, University of Bologna, Via Toffano 2 - 40125, Bologna, Italy
  • fYear
    2015
  • Firstpage
    4
  • Lastpage
    9
  • Abstract
    In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore´s law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized and a few simulation results of heterojunction TFETs are reported and discussed.
  • Keywords
    "Inverters","Logic gates","Tunneling","CMOS integrated circuits","Leakage currents","Heterojunctions"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference (ESSDERC), 2015 45th European
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-7133-9
  • Electronic_ISBN
    2378-6558
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2015.7324700
  • Filename
    7324700
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3688968