DocumentCode :
3688972
Title :
Investigations of vapor phase deposited transition metal dichalcogenide films for future electronic applications
Author :
Toby Hallam;Hye-Young Kim;Maria O´Brien;Riley Gatensby;Niall McEvoy;Georg S. Duesberg
Author_Institution :
School of Chemistry, Trinity College Dublin, Centre for Adaptive Nanostructures and Nanodevices, CRANN, &
fYear :
2015
Firstpage :
26
Lastpage :
30
Abstract :
In this work we present investigations on ultrathin and monolayered transition metal dichalcogenides (TMDs). These recently have raised much interest for their applications in electronics. TMDs can be n- and p-type semiconductors and some of them undergo a change in band structure when thinned to a monolayer. In particular, with the TMD MoS2, a number of devices such as transistors, photodiodes, LEDs and chemical sensors have been demonstrated. In this report we focus on devices derived from MoS2 that is grown by methods that can be employed for the large scale synthesis.
Keywords :
"Films","Substrates","Metals","Photoluminescence","Logic gates","Photonic band gap","Crystals"
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2015 45th European
ISSN :
1930-8876
Print_ISBN :
978-1-4673-7133-9
Electronic_ISBN :
2378-6558
Type :
conf
DOI :
10.1109/ESSDERC.2015.7324705
Filename :
7324705
Link To Document :
بازگشت