• DocumentCode
    3688981
  • Title

    Technology and design of GaN power devices

  • Author

    P. Moens;A. Banerjee;P. Coppens;A. Constant;P. Vanmeerbeek;Z. Li;F. Declercq;L. De Schepper;H. De Vleeschouwer;C. Liu;B. Padmanabhan;W. Jeon;J. Guo;A. Salih;M. Tack

  • Author_Institution
    ON Semiconductor, Oudenaarde, Belgium
  • fYear
    2015
  • Firstpage
    64
  • Lastpage
    67
  • Abstract
    This paper reports on the technology and design aspects of an industrial DHEMT process for 650V rated GaN-on-Si power devices, using an in-situ MOCVD grown SiN as surface passivation and gate dielectric, with low interface state density and excellent TDDB. Optimization of the GaN epi stack results in very low off-state leakage (<;10nA/mm). Due to the reduction of buffer trapping, low dynamic Ron (<;10%) is obtained, both at room temperature and at high temperature.
  • Keywords
    "Gallium nitride","Logic gates","Silicon compounds","Aluminum gallium nitride","Wide band gap semiconductors","HEMTs","Dielectrics"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference (ESSDERC), 2015 45th European
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-7133-9
  • Electronic_ISBN
    2378-6558
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2015.7324714
  • Filename
    7324714
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3688981