DocumentCode :
3688986
Title :
FinFET versus UTBB SOI — A RF perspective
Author :
Jean-Pierre Raskin
Author_Institution :
Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université
fYear :
2015
Firstpage :
84
Lastpage :
88
Abstract :
FinFET and Ultra Thin Body and BOX (UTBB) Silicon-on-Insulator (SOI) MOSFETs are the most promising advanced devices to fulfill the International Technology Roadmap for Semiconductors (ITRS) requirements. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show pretty similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.
Keywords :
"Decision support systems","Yttrium","Hafnium"
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2015 45th European
ISSN :
1930-8876
Print_ISBN :
978-1-4673-7133-9
Electronic_ISBN :
2378-6558
Type :
conf
DOI :
10.1109/ESSDERC.2015.7324719
Filename :
7324719
Link To Document :
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