• DocumentCode
    3688996
  • Title

    The world´s first high voltage GaN-on-diamond power devices

  • Author

    Turar Baltynov;Vineet Unni;E. M. Sankara Narayanan

  • Author_Institution
    Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom
  • fYear
    2015
  • Firstpage
    126
  • Lastpage
    129
  • Abstract
    This paper reports the fabrication method and electrical characterization results of the first-ever demonstrated high voltage AlGaN/GaN HEMTs on CVD diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ~ 1100V. Temperature characterization of Capacitance voltage characteristics provides insight on the temperature dependence of VTH and 2DEG sheet carrier concentration in the fabricated devices.
  • Keywords
    "HEMTs","MODFETs","Gallium nitride","Aluminum gallium nitride","Wide band gap semiconductors","Logic gates","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference (ESSDERC), 2015 45th European
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-7133-9
  • Electronic_ISBN
    2378-6558
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2015.7324729
  • Filename
    7324729
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3688996