Title :
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model
Author :
J. Pelloux-Prayer;M. Cassé;F. Triozon;S. Barraud;Y.-M. Niquet;J.-L. Rouvière;O. Faynot;G. Reimbold
Author_Institution :
CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France |
Abstract :
The effect of strain on carrier mobility in triple gate FDSOI nanowires is experimentally investigated through piezoresistance measurements. We propose an empirical model based on simple assumptions that allows fitting the piezoresistive coefficients as well as the carrier mobility for various device geometries. We highlight an enhanced strain effect for Trigate nanowires with channel height below 11nm.
Keywords :
"Piezoresistance","Silicon","FinFETs","Strain","Semiconductor device modeling","Logic gates"
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2015 45th European
Print_ISBN :
978-1-4673-7133-9
Electronic_ISBN :
2378-6558
DOI :
10.1109/ESSDERC.2015.7324752
