• DocumentCode
    3689028
  • Title

    Sharp-switching Z2-FET device in 14 nm FDSOI technology

  • Author

    H. El Dirani;Y. Solaro;P. Fonteneau;P. Ferrari;S. Cristoloveanu

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2015
  • Firstpage
    250
  • Lastpage
    253
  • Abstract
    Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, an adjustable triggering voltage (VON), and can be considered for Electro-Static Discharge (ESD). The operation of our device relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained on the 14 nm FDSOI (Fully Depleted SOI) node.
  • Keywords
    "Electrostatic discharges","Logic gates","Switches","Performance evaluation","Leakage currents","Films","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference (ESSDERC), 2015 45th European
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-7133-9
  • Electronic_ISBN
    2378-6558
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2015.7324761
  • Filename
    7324761
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3689028