DocumentCode :
3689028
Title :
Sharp-switching Z2-FET device in 14 nm FDSOI technology
Author :
H. El Dirani;Y. Solaro;P. Fonteneau;P. Ferrari;S. Cristoloveanu
Author_Institution :
STMicroelectronics, Crolles, France
fYear :
2015
Firstpage :
250
Lastpage :
253
Abstract :
Z2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, an adjustable triggering voltage (VON), and can be considered for Electro-Static Discharge (ESD). The operation of our device relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained on the 14 nm FDSOI (Fully Depleted SOI) node.
Keywords :
"Electrostatic discharges","Logic gates","Switches","Performance evaluation","Leakage currents","Films","Silicon"
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2015 45th European
ISSN :
1930-8876
Print_ISBN :
978-1-4673-7133-9
Electronic_ISBN :
2378-6558
Type :
conf
DOI :
10.1109/ESSDERC.2015.7324761
Filename :
7324761
Link To Document :
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