Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current

In this paper we engineer a TiN\Al₂O₃\(Hf, Al)O₂\Ta₂O₅\Hf Oxide Resistive Random Access Memory (OxRRAM) device for fast switching at low operation current without sacrificing the retention and endurance properties. The integrated 40nm × 40nm cell switches at 10μA using write pulses shorter than 100ns (resp. 1us) for RESET (resp. SET) and with amplitude <;2V. Using these conditions in a verify algorithm, a resistive window of x10 is reliably obtained, decreasing the write speed by more than 1 decade compared to state-of-the-art OxRRAM stacks.