• DocumentCode
    3689035
  • Title

    Back-gate effects and detailed characterization of junctionless transistor

  • Author

    Mukta Singh Parihar;Fan Yu Liu;Carlos Navarro;Sylvain Barraud;Maryline Bawedin;Irina Ionica;Abhinav Kranti;Sorin Cristoloveanu

  • Author_Institution
    IMEP-LAHC, INP Grenoble, MINATEC, 3 Parvis Louis Neel, CS 50257, 38016 Grenoble, France
  • fYear
    2015
  • Firstpage
    282
  • Lastpage
    285
  • Abstract
    The work addresses effect of inter-gate coupling on back-channel characteristics of planar accumulation-mode junctionless (JL) MOSFETs, fabricated with advanced FDSOI technology. A systematic methodology to extract and discriminate the contributions of bulk and accumulation-mode mobility has been developed. Front-gate voltage strongly controls the properties of back channel in ultra-thin heavily doped JL devices. It has been demonstrated that both volume and accumulation-mode mobilities increase when the front surface is in accumulation.
  • Keywords
    "Decision support systems","Erbium"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference (ESSDERC), 2015 45th European
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-7133-9
  • Electronic_ISBN
    2378-6558
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2015.7324769
  • Filename
    7324769
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3689035