DocumentCode :
3689039
Title :
Contact resistance extraction methods for CNTFETs
Author :
Anibal Pacheco-Sanchez;Sven Mothes;Martin Claus;Michael SchrÖter
Author_Institution :
Department of Electrical and Computer Engineering, Technische Universitä
fYear :
2015
Firstpage :
298
Lastpage :
301
Abstract :
Three different methods for the extraction of the contact resistance based on both the well-known transfer length method (TLM) and two variants of the Y-function method have been applied to simulation and experimental data of CNTFETs and the results have been compared. While for TLM special CNT test structures are mandatory, standard electrical device characteristics are sufficient for the Y-function methods. The methods have been applied to CNTFETs with low and high channel resistance. It turned out that the standard Y-function method fails to deliver the correct contact resistance in case of a relatively high channel resistance compared to the contact resistances. A physical validation is also given for the application of these methods based on traditional Si MOSFET theory to quasi-ballistic CNTFETs.
Keywords :
"Contact resistance","CNTFETs","Resistance","MOSFET","Carbon nanotubes","Schottky barriers"
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference (ESSDERC), 2015 45th European
ISSN :
1930-8876
Print_ISBN :
978-1-4673-7133-9
Electronic_ISBN :
2378-6558
Type :
conf
DOI :
10.1109/ESSDERC.2015.7324773
Filename :
7324773
Link To Document :
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