• DocumentCode
    3689183
  • Title

    A new optimization based parasitic parameters extraction method for GaN HEMT with asymmetrical channel structure

  • Author

    Ye Yuan;Zheng Zhong;Yongxin Guo;Shanxiang Mu

  • Author_Institution
    Nanjing University of Science and Technology, Jiangsu, China
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A good large-signal model relies on the accurate small-signal parameter extraction. In order to get an accurate small signal model, the parasitic parameters must be de-embedded precisely. In this paper, an optimization based parasitic parameters extraction method is proposed. This method take the effect of asymmetrical channel structure at cold-FET condition into consideration.
  • Keywords
    "Equivalent circuits","HEMTs","Integrated circuit modeling","Capacitance","Parameter extraction","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
  • Type

    conf

  • DOI
    10.1109/IMWS-AMP.2015.7324920
  • Filename
    7324920
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3689183