DocumentCode
3689185
Title
High power S-band GaN-based power amplifier for radar systems
Author
Yuting Yang;Mi Zhang;Wenquan Che;Haidong Chen;Qi Cai
Author_Institution
Department of Communication Engineering, Nanjing University of Science &
fYear
2015
fDate
7/1/2015 12:00:00 AM
Firstpage
1
Lastpage
3
Abstract
One S-band high-power GaN-based power amplifier (PA) is investigated. The design of the multi-stage PA and the biasing circuit are investigated seperately, including the two stages of power amplifiers which delivers about 50dBm of saturated output power in class AB from 2.7 to 2.9 GHz and the bias control channel which provides special bias and power sequencing for GaN HEMTs. Overall circuits operating at S band are designed, fabricated and measured.
Keywords
"Power amplifiers","Gallium nitride","HEMTs","MODFETs","Power generation","Logic gates","Threshold voltage"
Publisher
ieee
Conference_Titel
Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
Type
conf
DOI
10.1109/IMWS-AMP.2015.7324922
Filename
7324922
Link To Document