Title :
Synthesis of graphene and other 2D material: The past and future of chemical vapor deposition
Author :
S. S. Pei;Q. K. Yu;K. P. Huang;S. R. Xing;S. C. Chang;R. Ebrahim;F. Mansurov
Author_Institution :
Center for Advance Materials and Department of Electrical and Computer Engineering, University of Houston, Houston, TX 77096 USA
fDate :
7/1/2015 12:00:00 AM
Abstract :
Over the past seven years, chemical vapor deposition has emerged as the preferred technique for the synthesis of graphene films on metal as well as other substrates. Commercial cell phones with a graphene touch screen have been introduced and roll-to-roll production tools have been demonstrated. The deposition temperature is also reduced from >1000°C to ~400°C with a plasma-enhanced process. For device applications, a seeded growth of single-crystal graphene at predetermined location technique has been developed to avoid the detrimental effects of the grain boundaries. The application of chemical vapor deposition and seeded growth to transition metal dichalcogenides is now under investigation.
Keywords :
"Graphene","Films","Substrates","Yttrium","Plasma temperature","Chemical vapor deposition"
Conference_Titel :
Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
DOI :
10.1109/IMWS-AMP.2015.7324942