• DocumentCode
    3689205
  • Title

    Synthesis of graphene and other 2D material: The past and future of chemical vapor deposition

  • Author

    S. S. Pei;Q. K. Yu;K. P. Huang;S. R. Xing;S. C. Chang;R. Ebrahim;F. Mansurov

  • Author_Institution
    Center for Advance Materials and Department of Electrical and Computer Engineering, University of Houston, Houston, TX 77096 USA
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Over the past seven years, chemical vapor deposition has emerged as the preferred technique for the synthesis of graphene films on metal as well as other substrates. Commercial cell phones with a graphene touch screen have been introduced and roll-to-roll production tools have been demonstrated. The deposition temperature is also reduced from >1000°C to ~400°C with a plasma-enhanced process. For device applications, a seeded growth of single-crystal graphene at predetermined location technique has been developed to avoid the detrimental effects of the grain boundaries. The application of chemical vapor deposition and seeded growth to transition metal dichalcogenides is now under investigation.
  • Keywords
    "Graphene","Films","Substrates","Yttrium","Plasma temperature","Chemical vapor deposition"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
  • Type

    conf

  • DOI
    10.1109/IMWS-AMP.2015.7324942
  • Filename
    7324942