• DocumentCode
    3689212
  • Title

    Influence of packaging materials on GaN RF power devices

  • Author

    M. Buchta;J. Thorpe;H. Blanck;K. Beilenhoff;D. Floriot;M. Kuball;T. Mrotzek;S. Knippscheer;F. Courtade;A. Xiong

  • Author_Institution
    United Monolithic Semiconductors, Ulm, Germany
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper describes the influence of different base plate materials on the electrical behavior of a RF GaN power device. Three different materials are tested and measured, first with a smaller device, then with a 36mm gate periphery AlGaN/GaN HEMT on SiC device, with an output power of 130W at L-band. The influence of the thermal conductance of each base plate material on the electrical performance of the devices is shown.
  • Keywords
    "Gallium nitride","Temperature measurement","Semiconductor device measurement","Logic gates","Power measurement","HEMTs","Harmonic analysis"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
  • Type

    conf

  • DOI
    10.1109/IMWS-AMP.2015.7324949
  • Filename
    7324949
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3689212