• DocumentCode
    3689215
  • Title

    AlGaN/GaN HEMT development targeted for S-band application

  • Author

    Chenggong Yin;Xi Song;Xinchuan Zhang;Mengjie Zhou;Yongsheng Zhang;Naiqian Zhang;Yi Pei

  • Author_Institution
    Dynax Semiconductor Inc., 215300 Jiangsu, China
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper demonstrates a 180W packaged AlGaN/GaN HEMT targeted for S-band application, operating at 48V drain bias voltage. Under WCDMA (with DPD) test, the average power and drain efficiency are 35W and 33.3%. After 1000 hours HTRB test, no electrical failure of the device is observed.
  • Keywords
    "Gallium nitride","HEMTs","Aluminum gallium nitride","Wide band gap semiconductors","Logic gates","Integrated circuit modeling","Multiaccess communication"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
  • Type

    conf

  • DOI
    10.1109/IMWS-AMP.2015.7324952
  • Filename
    7324952
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3689215