DocumentCode
3689784
Title
Nanocarbon interconnects: Demonstration of properties better than Cu and remaining issues
Author
Shintaro Sato
Author_Institution
Fujitsu Laboratories Ltd, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
fYear
2015
fDate
5/1/2015 12:00:00 AM
Firstpage
313
Lastpage
316
Abstract
Nanocarbon materials including graphene and carbon nanotubes (CNTs) are promising candidates for future LSI interconnects. We recently demonstrated sub-10-nm-wide graphene interconnects whose resistivity is lower than that of Cu with similar dimensions. In this paper, we first describe the fabrication and evaluation of such graphene interconnects. We then explain a newly-developed fabrication process for carbon nanotube (CNT) vias and plugs, which relies on implantation of CNTs into sub-micrometer-sized holes. We then point out further issues to be addressed for realizing nanocarbon interconnects.
Keywords
"Plugs","Conductivity","Graphene","Films","Fabrication","Substrates","Lithography"
Publisher
ieee
Conference_Titel
Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
ISSN
2380-632X
Electronic_ISBN
2380-6338
Type
conf
DOI
10.1109/IITC-MAM.2015.7325589
Filename
7325589
Link To Document