DocumentCode
3689798
Title
Plasma etch challenges at 14nm and beyond technology nodes in the BEOL
Author
Ph. Brun;F. Bailly;M. Guillermet;E. Aparico;N. Posseme
Author_Institution
CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, France
fYear
2015
fDate
5/1/2015 12:00:00 AM
Firstpage
21
Lastpage
24
Abstract
With the constant scaling down in dimension, the metal hard mask strategy, integration of choice for porous SiOCH film integration, presents new issues that cannot not been neglected for the 14nm and beyond. These issues and associated solutions are presented from plasma etch point of view for the 14nm node.
Keywords
"Etching","Plasmas","Chemistry","Tin","Dielectric films"
Publisher
ieee
Conference_Titel
Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
ISSN
2380-632X
Electronic_ISBN
2380-6338
Type
conf
DOI
10.1109/IITC-MAM.2015.7325604
Filename
7325604
Link To Document