• DocumentCode
    3689798
  • Title

    Plasma etch challenges at 14nm and beyond technology nodes in the BEOL

  • Author

    Ph. Brun;F. Bailly;M. Guillermet;E. Aparico;N. Posseme

  • Author_Institution
    CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, France
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    21
  • Lastpage
    24
  • Abstract
    With the constant scaling down in dimension, the metal hard mask strategy, integration of choice for porous SiOCH film integration, presents new issues that cannot not been neglected for the 14nm and beyond. These issues and associated solutions are presented from plasma etch point of view for the 14nm node.
  • Keywords
    "Etching","Plasmas","Chemistry","Tin","Dielectric films"
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
  • ISSN
    2380-632X
  • Electronic_ISBN
    2380-6338
  • Type

    conf

  • DOI
    10.1109/IITC-MAM.2015.7325604
  • Filename
    7325604