Title :
Low temperature thermal and plasma enhanced atomic layer deposition of ruthenium using RuO4 and H2/H2-plasma
Author :
Matthias M. Minjauw;Jolien Dendooven;Boris Capon;Christophe Detavernier;Marc Schaekers
Author_Institution :
Department of Solid State Sciences, Ghent University, Conformal Coating of Nanostructures (CoCooN), Ghent, Belgium
fDate :
5/1/2015 12:00:00 AM
Abstract :
A thermal (RuO4/H2-gas) and a plasma enhanced (RuO4/H2-plasma) atomic layer deposition (ALD) process for deposition of Ru are reported. The ALD characteristics and film properties of both processes are presented. The thermal process is compared to the plasma process in terms of film properties as a function of sample temperature. Finally, a discussion about the probable ALD reaction mechanisms is given.
Keywords :
"Films","Plasma temperature","Atomic layer deposition","Surface treatment","Conductivity","Ruthenium"
Conference_Titel :
Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
Electronic_ISBN :
2380-6338
DOI :
10.1109/IITC-MAM.2015.7325607
