• DocumentCode
    3689801
  • Title

    Low temperature thermal and plasma enhanced atomic layer deposition of ruthenium using RuO4 and H2/H2-plasma

  • Author

    Matthias M. Minjauw;Jolien Dendooven;Boris Capon;Christophe Detavernier;Marc Schaekers

  • Author_Institution
    Department of Solid State Sciences, Ghent University, Conformal Coating of Nanostructures (CoCooN), Ghent, Belgium
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    A thermal (RuO4/H2-gas) and a plasma enhanced (RuO4/H2-plasma) atomic layer deposition (ALD) process for deposition of Ru are reported. The ALD characteristics and film properties of both processes are presented. The thermal process is compared to the plasma process in terms of film properties as a function of sample temperature. Finally, a discussion about the probable ALD reaction mechanisms is given.
  • Keywords
    "Films","Plasma temperature","Atomic layer deposition","Surface treatment","Conductivity","Ruthenium"
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
  • ISSN
    2380-632X
  • Electronic_ISBN
    2380-6338
  • Type

    conf

  • DOI
    10.1109/IITC-MAM.2015.7325607
  • Filename
    7325607
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3689801