Interconnect for emerging new memories

Summary form only given. We will review the potentials of several new memory adoptions in market, and their power, performance and reliability expectations from basic operation mechanisms. Challenges of interconnect will be highlighted in the read and programming for PCRAM, STTRAM, OxRAM and CBRAM; and solution spaces in novel materials, processing and integration are discussed to support the operations at product level. Architectures to achieve high memory density such as cross-point and 3D schemes are also shown to demonstrate the need of new materials for interconnect integration, specifically for memories that show high current program required for high temperature data retention.