DocumentCode
3689825
Title
Simple test vehicle for metal fill and resistance of sub-8nm nanowire
Author
Seung Hoon Sung;Jasmeet Chawla;Colin Carver;Ramanan Chebiam;James Clarke;Chris Jezewski;Tristan Tronic;Bob Turkot;Hui Jae Yoo
Author_Institution
Components Research, Intel Corporation, 5200 NE Elam Young Pkwy, Hillsboro, Oregon, 97124 USA
fYear
2015
fDate
5/1/2015 12:00:00 AM
Firstpage
87
Lastpage
90
Abstract
Assessing metal gap fill capability and electrical behavior in patterned features ahead of full integration is valuable in interconnect process development as feature sizes scale beyond the 14 nm technology node. In this work a simple device is fabricated with existing silicon patterning recipes to achieve an electrical test vehicle that can test a range of metal candidates for interconnects. The vehicle is characterized using electron microscopy and electrical measurements.
Keywords
Decision support systems
Publisher
ieee
Conference_Titel
Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
ISSN
2380-632X
Electronic_ISBN
2380-6338
Type
conf
DOI
10.1109/IITC-MAM.2015.7325633
Filename
7325633
Link To Document