• DocumentCode
    3689829
  • Title

    Direct copper electrodeposition on novel CoMo diffusion barrier

  • Author

    Xu Wang;Li-Ao Cao;Xin-Ping Qu

  • Author_Institution
    State key lab of ASIC and system, School of Microelectronics, Fudan University, Shanghai 200433, China
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    In this work, an alkaline electrolyte containing copper sulfate and ethanediamine (En) as ligand was used for direct Cu electrodeposition on novel alloy barrier CoxMoy films and comparison was made between alkaline bath and H2SO4-CuSO4 acidic bath. In alkaline bath, the nucleation density of Cu on Co1Mo3 is much higher than that in acidic bath. It is found that the Cu island density increases and the surface roughness decreases with the higher content of Co in CoxMoy films. Results show that adhesion between Cu and Co is better than that between Cu and Mo, which affects initial nucleation behavior and surface roughness of the deposited Cu films. Uniform and conformal copper was successfully electroplated on 5 nm Co1Mo3 layers covered patterned wafers in alkaline bath without additives.
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
  • ISSN
    2380-632X
  • Electronic_ISBN
    2380-6338
  • Type

    conf

  • DOI
    10.1109/IITC-MAM.2015.7325637
  • Filename
    7325637