DocumentCode :
3689829
Title :
Direct copper electrodeposition on novel CoMo diffusion barrier
Author :
Xu Wang;Li-Ao Cao;Xin-Ping Qu
Author_Institution :
State key lab of ASIC and system, School of Microelectronics, Fudan University, Shanghai 200433, China
fYear :
2015
fDate :
5/1/2015 12:00:00 AM
Firstpage :
127
Lastpage :
130
Abstract :
In this work, an alkaline electrolyte containing copper sulfate and ethanediamine (En) as ligand was used for direct Cu electrodeposition on novel alloy barrier CoxMoy films and comparison was made between alkaline bath and H2SO4-CuSO4 acidic bath. In alkaline bath, the nucleation density of Cu on Co1Mo3 is much higher than that in acidic bath. It is found that the Cu island density increases and the surface roughness decreases with the higher content of Co in CoxMoy films. Results show that adhesion between Cu and Co is better than that between Cu and Mo, which affects initial nucleation behavior and surface roughness of the deposited Cu films. Uniform and conformal copper was successfully electroplated on 5 nm Co1Mo3 layers covered patterned wafers in alkaline bath without additives.
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
ISSN :
2380-632X
Electronic_ISBN :
2380-6338
Type :
conf
DOI :
10.1109/IITC-MAM.2015.7325637
Filename :
7325637
Link To Document :
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