Title :
High-voltage monolithic 3D capacitors based on through-silicon-via technology
Author :
Saeideh Gruenler;Gudrun Rattmann;Tobias Erlbacher;Anton J. Bauer;Lothar Frey
Author_Institution :
Fraunhofer IISB, Erlangen, Germany
fDate :
5/1/2015 12:00:00 AM
Abstract :
High-voltage monolithic 3D capacitors operating at breakdown voltages up to 200 V are fabricated based on through silicon-via technology. Electric characteristics of monolithic 3D capacitors exhibit a capacitance density of 17 times larger than that of planar capacitors with the same area and dielectric thickness. Impact of the 3D capacitors´ architecture on their electrical properties is studied for various patterns and geometries.
Keywords :
"Decision support systems","Fabrication","Capacitors"
Conference_Titel :
Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
Electronic_ISBN :
2380-6338
DOI :
10.1109/IITC-MAM.2015.7325655
