• DocumentCode
    3689856
  • Title

    Solid state reaction of Ni thin film on n-InP susbtrate for III-V laser contact technology

  • Author

    E. Ghegin;F. Nemouchi;J. Lábár;S. Favier;C. Perrin;K. Hoummada;S. Gurbán;P. Gergaud

  • Author_Institution
    STMicroelectronics, 850 rue Jean Monnet 38926 Crolles Cedex, France
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    269
  • Lastpage
    272
  • Abstract
    The metallurgical properties of the Ni/n-InP system have been investigated. We report the formation of a compositionally nonuniform Ni-In-P amorphous layer during the DC sputtering metal deposition process which includes an Ar+ cleaning. After RTP and long in situ annealing treatments the simultaneous appearance of the Ni2P and Ni3P binary phases and the Ni2InP ternary phase were observed. Kinetics and nucleation phenomena were highlighted by the precipitation of In during the RTP.
  • Keywords
    "Nickel","Indium phosphide","III-V semiconductor materials","Decision support systems","Annealing","Physics"
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
  • ISSN
    2380-632X
  • Electronic_ISBN
    2380-6338
  • Type

    conf

  • DOI
    10.1109/IITC-MAM.2015.7325664
  • Filename
    7325664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3689856