Terahertz characteristics of InGaAs with periodically-positioned InAlAs insertion layers

We present terahertz (THz) generation and detection characteristics of InGaAs with periodically-positioned InAlAs insertion layers (InGaAs PPIL). A THz transmitter with the InGaAs PPIL showed three times higher than that of an InGaAs epilayer without the insertion layer at the current signal for THz generation properties. Also, the detection properties of a THz receiver with the InGaAs PPIL showed over twenty-five times higher than that of a simple InGaAs epilayer. Also current signals of the InGaAs PPIL was improved with increasing the number of the InAlAs insertion layers.