DocumentCode :
3691641
Title :
Detection properties of spiral-antenna-coupled microbolometer fabricated on Si3N4/SiO2 membrane at 200 GHz band
Author :
T. Uchida;A. Matsushita;T. Tachiki
Author_Institution :
National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
Spiral-antenna-coupled Bi microbolometer was fabricated on a Si3N4/SiO2 membrane. The DC sensitivity of the device was 335 W-1 and the responsivity was 110 V/W at 220 GHz for Ib = 1.0 mA. These values are about 10 times higher than those of the Bi bolometer fabricated on a dielectric substrate. The NEP was estimated to be 4×10-10 W/Hz1/2 for a modulation frequency at 1 kHz.
Keywords :
"Antennas","Bismuth","Bolometers","Spirals","Sensitivity","Detectors","Substrates"
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
ISSN :
2162-2027
Electronic_ISBN :
2162-2035
Type :
conf
DOI :
10.1109/IRMMW-THz.2015.7327899
Filename :
7327899
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3691641
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