DocumentCode
3692101
Title
HBAR as a high frequency high stress generator
Author
Tanay A. Gosavi;Evan R. MacQuarrie;Gregory D. Fuchs;Sunil A. Bhave
Author_Institution
Cornell University, Ithaca, NY, USA
fYear
2015
Firstpage
1
Lastpage
4
Abstract
In this paper we report on High-Overtone Bulk Acoustic Resonator (HBAR) as high stress generator by measuring f-Q product of various tones and overtones from room temperature to 80 Kelvin. HBARs provide excellent acoustic isolation from anchor losses as the modes are confined within the high finesse acoustic cavity made from single crystal diamond or silicon carbide (SiC) substrates. Their high Q and linearity makes them robust transducers for generating up to 20MPa AC stress with small drive voltages at GHz frequencies which is instrumental in manipulating spin-defect qubits in these materials.
Keywords
"Temperature measurement","Diamonds","Silicon carbide","Stress","Substrates","Silicon","Q-factor"
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2015 IEEE International
Type
conf
DOI
10.1109/ULTSYM.2015.0361
Filename
7329069
Link To Document