DocumentCode :
3692355
Title :
SAW characteristics of AlN/SiO2/3C-SiC layered structure with embedded electrodes
Author :
Qiaozhen Zhang;Tao Han;Gongbin Tang;Jing Chen;Ken-ya Hashimoto
Author_Institution :
Department of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, China
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
A novel sandwich structure of AlN/SiO2/3C-SiC with embedded electrodes, which enables the growth of highly quality AlN thin films, is proposed and studied. The phase velocity, coupling factor, and temperature coefficient of frequency (TCF) of SAWs in the proposed structure have been investigated using the finite element method (FEM). The simulation results show that high velocity of 5,485m/s and large effective coupling factor of 1.45% can be simultaneously obtained, which is about 3.4 times larger than the value previously reported. The excellent zero TCF is also achieved without deteriorating the coupling factor by adding the SiO2 overlay.
Keywords :
"Aluminum nitride","Electrodes","III-V semiconductor materials","Couplings","Temperature","Surface acoustic waves","Surface acoustic wave devices"
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2015 IEEE International
Type :
conf
DOI :
10.1109/ULTSYM.2015.0116
Filename :
7329346
Link To Document :
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