Title :
A GaN high power and efficient amplifier for L-Band Galileo system
Author :
Rocco Giofré;Paolo Colantonio;Franco Giannini;Laura Gonzalez;Francisco de Arriba;Lorena Cabria;Didier Baglieri
Author_Institution :
E.E.Dept. University of Roma Tor Vergata, via del Politecnico 1, 00133, Italy
Abstract :
This paper describes the development of an L-Band (f0 = 1.575GHz) high power and efficient amplifier designed for the European satellite navigation system (i.e., Galileo). The amplifier, developed in the framework of the European Project named SLOGAN, exploits the GH50-10 GaN technology available at United Monolithic Semiconductor foundry. The required output power level is achieved by parallelizing several GaN die power bars of 12mm and/or 26.5 mm. In continuous wave operating mode, the first prototype is able to deliver an output power higher than 250W at less than 2 dB of gain compression. Moreover, the registered gain and efficiency are higher than 54 dB and 54 %, respectively.
Keywords :
"Power generation","Gallium nitride","Gain","Europe","Prototypes","L-band","Bars"
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 2015
DOI :
10.1109/INMMIC.2015.7330362