Title :
30 μm-pitch oxide TFT-based gate driver design for small-size, high-resolution, and narrow-bezel displays
Author :
Di Geng ; Yuan Feng Chen ; Mativenga, Mallory ; Jin Jang
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
Abstract :
We report the design and fabrication of a high-yield, a high-speed, and an ultranarrow gate driver with amorphous-indium - gallium - zinc-oxide thin-film transistors (TFTs). A single stage of the gate driver consists of nine TFTs and one capacitor. For supply voltage (VDD) of 20 V, the gate driver operates with a pulsewidth of 2 μs, which is compatible with a 4k2k display operated at 240 Hz. In addition, the proposed gate driver is ultrasmall in physical size, which is only 30 μm in width (pitch) and 720 μm in length, and thus suitable for small-size, high-resolution, and narrow bezel display.
Keywords :
amorphous semiconductors; display devices; driver circuits; indium compounds; thin film transistors; In-Ga-Zn-O; TFT-based gate driver design; amorphous-indium-gallium-zinc-oxide TFT; narrow-bezel displays; size 30 mum; size 720 mum; thin-film transistors; time 2 mus; ultranarrow gate driver; voltage 20 V; Capacitance; Capacitors; Fabrication; Layout; Logic gates; Shift registers; Thin film transistors; Beck-channel-etched ${a}$ -IGZO TFT; beck-channel-etched a-IGZO TFT; gate driver; high-resolution; high-speed; narrow-bezel;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2445319
