DocumentCode :
3693764
Title :
Seed layer controlled deposition of ZnO films with a tilted c-axis for shear mode resonators
Author :
G. Rughoobur;L. Garc?a-Gancedo;A. J. Flewitt;W. I. Milne;M. DeMiguel-Ramos;M. Clement;T. Mirea;J. Olivares;E. Iborra
Author_Institution :
Electrical Engineering Division, University Of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, UK
fYear :
2014
fDate :
6/1/2014 12:00:00 AM
Firstpage :
297
Lastpage :
300
Abstract :
We investigate different procedures for achieving ZnO films with the c-axis tilted with respect to the normal for their application in acoustic resonators operating in the shear modes. The approach consists in combining the use of textured surfaces of different nature with off-axis sputtering, which promotes the growth of ZnO with inclined microcrystals. The rough surfaces investigated are porous-SiO2 and AlN and ZnO seed layers films specifically prepared to exhibit textured surfaces. The suitability of these films for the intended applications is tested by analyzing the frequency response of ZnO-based solidly mounted resonators. Electromechanical coupling factors for the shear modes up to 3.3% are achieved.
Keywords :
"Zinc oxide","II-VI semiconductor materials","Substrates","Films","Aluminum nitride","III-V semiconductor materials","Electrodes"
Publisher :
ieee
Conference_Titel :
European Frequency and Time Forum (EFTF), 2014
Type :
conf
DOI :
10.1109/EFTF.2014.7331491
Filename :
7331491
Link To Document :
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