• DocumentCode
    3694572
  • Title

    Influence of charge carrier density in silicon on spectrum band structure of photonic crystal

  • Author

    Borys Chernyshov

  • Author_Institution
    Radiospectroscopy Dept. of O.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine (IRE NASU), 12 Ak. Proskura Str., Kharkiv, 61085, Ukraine
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper is devoted to numerical and experimental investigating of photonic crystals based on dielectric and semiconductor layers in millimeter waveband. The numerical modeling and the experimental measurement in frequency range of 22–40 GHz has been made. Decision of the charge carrier concentration values in silicon, which makes possible to use that material in microwave range has been made.
  • Publisher
    ieee
  • Conference_Titel
    Applied Physics (YSF), 2015 International Young Scientists Forum on
  • Type

    conf

  • DOI
    10.1109/YSF.2015.7333188
  • Filename
    7333188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3694572