Title :
Robust subthreshold level conversion
Author :
Joseph Lin;Antonio Soares;Steven Vitale
Author_Institution :
MIT Lincoln Laboratory, Lexington, MA
Abstract :
We describe a robust level converter that is capable of converting up to 1.2V from a subthreshold input voltage of 60mV. Measurement results are given for test circuits fabricated in a 90nm FDSOI subthreshold optimized process.
Keywords :
"MOSFET","Robustness","Logic gates","Implants","Threshold voltage","Standards"
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
DOI :
10.1109/S3S.2015.7333499
